c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 www. ruichips .com ru1h 35 q n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 100 v gss gate - source voltage 2 5 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous for ward current t c =25 c 40 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 160 a t c =25 c 40 i d continuous drain current t c =100 c 2 7 a t c =25 c 111 p d maximum power dissipation t c =100 c 56 w r q jc thermal resistance - jun ction to case 1.35 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 22 0 m j ? 100 v/ 40 a, r ds ( on ) = 21 m ( tpy.)@ v gs =10v ? super high dense cell design ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? switching application absolute maximum ratings n - channel mosf e t to - 220 to - 220f to - 263 to - 247
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 2 www. ruichips .com ru1h 35 q electrical characteristics ( t a =25 c unless otherwise noted) ru1h 35 q symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds =250 m a 100 v v ds = 100 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 1 0 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 2 5 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 16 a 21 25 m w notes : pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature . limited by t jmax , i as = 2 1 a, v dd = 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse widt h 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 16 a, v gs =0v 0.8 1. 2 v t rr reverse recovery time 100 ns q rr reverse recovery charge i sd = 16 a, dl sd /dt=100a/ m s 4 3 0 nc dynamic ch aracteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 2 .8 w c iss input capacitance 2100 c oss output capacitance 250 c rss reverse transfer capacitance v gs =0v, v ds = 25 v, frequency=1.0mhz 115 pf t d ( on ) turn - on delay time 2 2 t r turn - on rise time 76 t d ( off ) turn - off delay time 6 0 t f turn - off fall time v dd = 50 v, r l = 30 w , i ds = 16 a, v gen = 10v, r g = 4.7 w 2 3 ns gate charge characteristics q g total gate charge 4 4 q gs gate - source charge 10 q gd gate - drain charge v ds = 80 v, v gs = 10v, i ds = 16 a 21 nc
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 3 www. ruichips .com ru1h 35 q typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperat ure ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse du ration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 4 www. ruichips .com ru1h 35 q typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 5 www. ruichips .com ru1h 35 q typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempe rature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 6 www. ruichips .com ru1h 35 q avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 7 www. ruichips .com ru1h 35 q ordering and marking information ru1h 35 package (available) q : to 2 47 operatin g temperature range c : - 55 to 1 75 oc assembly material g : green & lead free packaging t : tube
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 8 www. ruichips .com ru1h 35 q package information to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 ref 0.142 ref a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.400 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0. 000 0.012 e1 3.500 ref. 0.138 ref.
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 2011 9 www. ruichips .com ru1h 35 q customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
|
